2014

A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor.

Materials (Basel, Switzerland) Minamiki T, Minami T, Kurita R, Niwa O, Wakida SI, Fukuda K, Kumaki D, Tokito S
阅读原文 PDF DOI PubMed

组成图示

示意图生成中

传感器类型

检测对象

检测原理

检测灵敏度

效应效果

传感器的构成

中文摘要

英文摘要

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.

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