组成图示
示意图生成中
传感器类型
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检测对象
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检测原理
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检测灵敏度
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效应效果
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传感器的构成
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中文摘要
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英文摘要
In this work, an analytical model is developed for DM-DG-TMD-FET- based Biosensor including Fringing-field effects. The Analytical model has been developed for two different Device structures, namely Device structure-1 (without a gate above the nano-cavity) and Device structure-2 (with a gate above the nano-cavity) based on modulation of the dielectric constant of biomolecules in the nano-cavity region. The proposed model has been validated against both numerical quantum simulation results with the help of a few fitting parameters and it also agrees with the 2-dimensional numeric simulator SILVACO TCAD used in this work. The presence/absence of biomolecules has been detected by the metric of threshold voltage sensitivity [Formula: see text] and drain current [Formula: see text] for the neutral as well as charged biomolecules. Sensitivities of partially filled nano-cavities arising out of steric hindrance in both the biosensors are compared. Optimization of device dimensions has also been included in this work to enhance the sensitivity of the biosensors. It has been witnessed that the sensitivity of the proposed biosensor is [Formula: see text] 100% higher in Device structure-1 for neutral biomolecules with dielectric constant [Formula: see text] = 12, when compared to Device structure-2 for fully filled cavities. Whereas for the charged biomolecules, Device structure-1 shows [Formula: see text] 50% enhanced sensitivity than Device structure-2 for [Formula: see text] [Formula: see text]. Device structure-1 demonstrates [Formula: see text]120% higher sensitivity than Device structure-2 with partially filled cavities (i.e. 66% filled cavity). Finally, benchmarking of the proposed biosensor is presented with contemporary, state-of-the-art biosensors and it is highlighted that [Formula: see text] FET-based biosensor emerges with a superior sensitivity of [Formula: see text] = 0.81 V for [Formula: see text].