组成图示
示意图生成中
传感器类型
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检测对象
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检测原理
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检测灵敏度
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效应效果
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传感器的构成
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中文摘要
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英文摘要
Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor's current or threshold voltage. Recently, realizing ISFET biosensors with better performance has attracted much attention. This paper proposes a novel ISFET biosensor by using the advantage of Tunnel Field-Effect Transistor (TFET). The device characteristics and sensing performance are systematically investigated by Silvaco Atlas TCAD simulations. Due to the novel structural design, the proposed sensor achieves a maximum current sensitivity (SIDSmax) of 99.99% and a threshold voltage sensitivity (SVTH) of 124%. To provide optimization guidelines, this work further explored the effect of geometric dimensions and gate dielectric materials on device performance. The excellent performance of the proposed biosensor makes it a promising candidate for future low-power, high-sensitivity biodetection applications.