传感器类型
场效应晶体管(FET)生物传感器
检测对象
H5N2禽流感病毒(H5N2 avian influenza virus, AIV);样品基质:1×PBS稀释的尿囊液病毒悬液
检测原理
mAbH5通过SPDP引入的吡啶二硫基与MPTMS修饰的p型SiNW-FET形成二硫键,定向固定于纳米线表面。当H5N2 AIV进入PDMS微流控通道并与mAbH5特异性结合后,病毒颗粒在pH 7.4下带负电荷(pI约3.2),在SiNW表面形成局部静电场,对p型SiNW产生门控效应,使源漏电导增加。病毒浓度越高,结合到纳米线表面的病毒颗粒越多,界面负电荷密度越大,电导变化越显著;在极低浓度下,病毒需经扩散和对流到达识别表面,因此响应时间较长。检测在Vsd=30 mV、Ag/AgCl溶液门接地条件下实时读取电导,无需外源标记。DTT可还原二硫键,去除AIV–mAbH5复合物并再生传感器。
检测灵敏度
检测范围: 10^-12–10^-17 M;最低检测浓度: 10^4 AIV/mL(约1.6×10^-17 M);S/N: 18
效应效果
该传感器表现出良好选择性与可重复性:裸SiNW-FET对H5N2 AIV无明显电导变化;mAbH5/SiNW-FET对H6N1 AIV(10^8 AIV/mL)无明显响应,而对H5N2 AIV(10^7 AIV/mL)电导显著增加;继续加入10^8 AIV/mL仅轻微变化,提示结合位点饱和。可逆功能化经电学测量验证可重复3个循环,MPTMS/SiNW-FET可重复使用20次以上,mAbH5/SiNW-FET可重复使用5次以上。对10^4 AIV/mL(约1.6×10^-17 M)极低浓度样品,经超过40 min后获得S/N=18的信号,AFM证实仅少量约120 nm病毒颗粒结合。作者认为该可复用SiNW-FET可用于病毒、蛋白、DNA、小分子及癌症标志物的高通量快速筛查。
传感器的构成
- 基底/换能器:p型硅纳米线场效应晶体管(SiNW-FET),含源/漏电极与Ag/AgCl溶液门,提供电导换能
- 微流控通道:PDMS微流控通道,耦合SiNW-FET阵列并引导样品与缓冲液流动
- 修饰层:3-巯基丙基三甲氧基硅烷(MPTMS)自组装层,提供巯基用于二硫键连接
- 连接/识别元件:抗H5N2禽流感病毒单克隆抗体(mAbH5),经N-琥珀酰亚胺基-3-(2-吡啶二硫基)丙酸酯(SPDP)活化后通过二硫键固定,特异性识别病毒
- 再生试剂:500 mM二硫苏糖醇(DTT)/1×PBS,还原二硫键并去除AIV–mAbH5复合物,实现传感器复用
中文摘要
本研究将可重复使用的硅纳米线场效应晶体管(SiNW-FET)作为生物传感器,用于在极稀溶液中超灵敏检测H5N2禽流感病毒(AIV)。通过二硫键连接实现SiNW-FET表面的可逆功能化:首先将3-巯基丙基三甲氧基硅烷(MPTMS)修饰到SiNW-FET表面形成MPTMS/SiNW-FET,并用二硫苏糖醇(DTT)洗涤以还原MPTMS巯基之间可能形成的二硫键;随后受体分子可通过形成二硫键固定于MPTMS/SiNW-FET表面。荧光观察和电学测量验证了可逆表面功能化的成功。以抗H5N2病毒单克隆抗体(mAbH5)修饰的SiNW-FET(mAbH5/SiNW-FET)在检测约10^-17 M H5N2 AIV后,经原子力显微镜表面形貌扫描,证明该SiNW-FET能够检测极少量H5N2 AIV颗粒。
英文摘要
We have applied a reusable silicon nanowire field-effect transistor (SiNW-FET) as a biosensor to conduct ultrasensitive detection of H5N2 avian influenza virus (AIV) in very dilute solution. The reversible surface functionalization of SiNW-FET was made possible using a disulfide linker. In the surface functionalization, 3-mercaptopropyltrimethoxysilane (MPTMS) was first modified on the SiNW-FET (referred to as MPTMS/SiNW-FET), with subsequent dithiothreitol washing to reduce any possible disulfide bonding between the thiol groups of MPTMS. Subsequently, receptor molecules could be immobilized on the MPTMS/SiNW-FET by the formation of a disulfide bond. The success of the reversible surface functionalization was verified with fluorescence examination and electrical measurements. A surface topograph of the SiNW-FET biosensor modified with a monoclonal antibody against H5N2 virus (referred to as mAb(H5)/SiNW-FET) after detecting approximately 10(-17) M H5N2 AIVs was scanned by atomic force microscopy to demonstrate that the SiNW-FET is capable of detecting very few H5N2 AIV particles.