场效应晶体管(FET)生物传感器 2012

Nanowire transistor-based ultrasensitive virus detection with reversible surface functionalization.

Chemistry, an Asian journal Chiang PL, Chou TC, Wu TH, Li CC, Liao CD, Lin JY, Tsai MH, Tsai CC, Sun CJ, Wang CH, Fang JM, Chen YT
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组成图示

Nanowire transistor-based ultrasensit... 传感器构成示意图

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传感器类型

场效应晶体管(FET)生物传感器

检测对象

H5N2禽流感病毒(H5N2 avian influenza virus, AIV);样品基质:1×PBS稀释的尿囊液病毒悬液

检测原理

mAbH5通过SPDP引入的吡啶二硫基与MPTMS修饰的p型SiNW-FET形成二硫键,定向固定于纳米线表面。当H5N2 AIV进入PDMS微流控通道并与mAbH5特异性结合后,病毒颗粒在pH 7.4下带负电荷(pI约3.2),在SiNW表面形成局部静电场,对p型SiNW产生门控效应,使源漏电导增加。病毒浓度越高,结合到纳米线表面的病毒颗粒越多,界面负电荷密度越大,电导变化越显著;在极低浓度下,病毒需经扩散和对流到达识别表面,因此响应时间较长。检测在Vsd=30 mV、Ag/AgCl溶液门接地条件下实时读取电导,无需外源标记。DTT可还原二硫键,去除AIV–mAbH5复合物并再生传感器。

检测灵敏度

检测范围: 10^-12–10^-17 M;最低检测浓度: 10^4 AIV/mL(约1.6×10^-17 M);S/N: 18

效应效果

该传感器表现出良好选择性与可重复性:裸SiNW-FET对H5N2 AIV无明显电导变化;mAbH5/SiNW-FET对H6N1 AIV(10^8 AIV/mL)无明显响应,而对H5N2 AIV(10^7 AIV/mL)电导显著增加;继续加入10^8 AIV/mL仅轻微变化,提示结合位点饱和。可逆功能化经电学测量验证可重复3个循环,MPTMS/SiNW-FET可重复使用20次以上,mAbH5/SiNW-FET可重复使用5次以上。对10^4 AIV/mL(约1.6×10^-17 M)极低浓度样品,经超过40 min后获得S/N=18的信号,AFM证实仅少量约120 nm病毒颗粒结合。作者认为该可复用SiNW-FET可用于病毒、蛋白、DNA、小分子及癌症标志物的高通量快速筛查。

传感器的构成

  • 基底/换能器:p型硅纳米线场效应晶体管(SiNW-FET),含源/漏电极与Ag/AgCl溶液门,提供电导换能
  • 微流控通道:PDMS微流控通道,耦合SiNW-FET阵列并引导样品与缓冲液流动
  • 修饰层:3-巯基丙基三甲氧基硅烷(MPTMS)自组装层,提供巯基用于二硫键连接
  • 连接/识别元件:抗H5N2禽流感病毒单克隆抗体(mAbH5),经N-琥珀酰亚胺基-3-(2-吡啶二硫基)丙酸酯(SPDP)活化后通过二硫键固定,特异性识别病毒
  • 再生试剂:500 mM二硫苏糖醇(DTT)/1×PBS,还原二硫键并去除AIV–mAbH5复合物,实现传感器复用

中文摘要

本研究将可重复使用的硅纳米线场效应晶体管(SiNW-FET)作为生物传感器,用于在极稀溶液中超灵敏检测H5N2禽流感病毒(AIV)。通过二硫键连接实现SiNW-FET表面的可逆功能化:首先将3-巯基丙基三甲氧基硅烷(MPTMS)修饰到SiNW-FET表面形成MPTMS/SiNW-FET,并用二硫苏糖醇(DTT)洗涤以还原MPTMS巯基之间可能形成的二硫键;随后受体分子可通过形成二硫键固定于MPTMS/SiNW-FET表面。荧光观察和电学测量验证了可逆表面功能化的成功。以抗H5N2病毒单克隆抗体(mAbH5)修饰的SiNW-FET(mAbH5/SiNW-FET)在检测约10^-17 M H5N2 AIV后,经原子力显微镜表面形貌扫描,证明该SiNW-FET能够检测极少量H5N2 AIV颗粒。

英文摘要

We have applied a reusable silicon nanowire field-effect transistor (SiNW-FET) as a biosensor to conduct ultrasensitive detection of H5N2 avian influenza virus (AIV) in very dilute solution. The reversible surface functionalization of SiNW-FET was made possible using a disulfide linker. In the surface functionalization, 3-mercaptopropyltrimethoxysilane (MPTMS) was first modified on the SiNW-FET (referred to as MPTMS/SiNW-FET), with subsequent dithiothreitol washing to reduce any possible disulfide bonding between the thiol groups of MPTMS. Subsequently, receptor molecules could be immobilized on the MPTMS/SiNW-FET by the formation of a disulfide bond. The success of the reversible surface functionalization was verified with fluorescence examination and electrical measurements. A surface topograph of the SiNW-FET biosensor modified with a monoclonal antibody against H5N2 virus (referred to as mAb(H5)/SiNW-FET) after detecting approximately 10(-17) M H5N2 AIVs was scanned by atomic force microscopy to demonstrate that the SiNW-FET is capable of detecting very few H5N2 AIV particles.